Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
Infineon SCT
Mosfet, N Channel, 55V, 94A, D2Pak; Transistor Polarity:n Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.0058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, N CH, 55V, 94A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:94A; Power Dissipation Pd:140W; Voltage Vgs Max:20V