サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
説明
onsemi FDP8876の詳細は販売業者から提供されます。
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-220AB Tube
RAIL / 30V,71A,8.5 OHMS,NCH,TO220,POWER TRENCH MOSFET
Power Field-Effect Transistor, 64A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-220AB
30V N-Channel PowerTrench® MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)64 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation70 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max8.7 mΩ
Rise Time97 ns
Turn-Off Delay Time51 ns
Turn-On Delay Time9 ns