Diodes Inc. ZXMN7A11Gの詳細は販売業者から提供されます。
Power Field-Effect Transistor, 3.8A I(D), 70V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4-PIN
MOSFET, N, SOT-223; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:70V; Current, Id Cont:3.8A; Resistance, Rds On:0.13ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-223; Termination Type:SMD; Application Code:SWLR; Current, Idm Pulse:10A; External Depth:7.3mm; External Length / Height:1.7mm; Power, Pd:2W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:70V; Voltage, Vgs th Min:1V; Width, External:6.7mm; Width, Tape:12mm