関連部品
InfineonIRF7416PBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
InfineonIRF7416TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
説明
Diodes Inc. ZXMN3A04DN8TAの詳細は販売業者から提供されます。
ZXMN3A04DN8 Series Dual N-Channel 30 V 0.02 Ohm Power MOSFET SMT - SOIC-8
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 6.5A 8-SOIC
Mosfet, Dual, N-Ch, 30V, 8.5A Rohs Compliant: Yes |Diodes Inc. ZXMN3A04DN8TA
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)6.5 A
Current Rating6.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time20.2 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.89 nF
Max Operating Temperature150 °C
Max Power Dissipation1.81 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Rds On Max20 mΩ
Resistance20 mΩ
Rise Time6.1 ns
Turn-Off Delay Time38.1 ns
Turn-On Delay Time5.2 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント