代替部品
Price @ 1000
$ 0.088
Stock
319,442
496,212
Authorized Distributors
0
1
Mount
Surface Mount
Surface Mount
Case/Package
TO-236-3
SOT-23
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
18 V
18 V
Max Collector Current
1 A
1 A
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
-
500 mV
hFE Min
150
150
Power Dissipation
-
300 mW
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-04-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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説明
Diodes Inc. MMBT123S-7の詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 1A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT 18V 300mW
TRANS NPN 18V 1A SOT23-3
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)45 V
Collector Emitter Breakdown Voltage18 V
Collector Emitter Voltage (VCEO)18 V
Continuous Collector Current1 A
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product100 MHz
hFE Min150
Max Breakdown Voltage18 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Transition Frequency100 MHz
Voltage Rating (DC)18 V
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm