サプライチェーン
Country of OriginGermany
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-02-01
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
説明
Diodes Inc. BS170Pの詳細は販売業者から提供されます。
DIODES INC. BS170P MOSFET Transistor, N Channel, 270 mA, 60 V, 5 ohm, 10 V, 3 V
N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92
MOSFET, N, E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 270mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd:
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageTO-92-3
Contact PlatingTin
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Continuous Drain Current (ID)270 mA
Current Rating270 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance60 pF
Max Operating Temperature200 °C
Max Power Dissipation625 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation625 mW
Rds On Max5 Ω
Resistance5 Ω
Schedule B8541210080
Threshold Voltage3 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm