サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-04-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-12-30
LTD Date2024-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
説明
onsemi BS170-D74Zの詳細は販売業者から提供されます。
N-Channel Small Signal MOSFET 60V, 500mA, 5Ω
830mW(Ta) 20V 3V@1mA 1N 60V 5¦¸@ 200mA,10V 500mA 40pF@10V TO-92-3 5.2mm*4.19mm*5.33mm
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-92-3
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight286 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating500 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance40 pF
Max Operating Temperature150 °C
Max Power Dissipation830 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation830 mW
Rds On Max5 Ω
Schedule B8541210080
Voltage Rating (DC)60 V