NXP Semiconductors MRFE6VP61K25HR6
価格と在庫
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRFE6VP61K25HR6 | 150 | 1 | 2h | |||||||||
| MRFE6VP61K25HR6CT-ND | 111 | 1 | Cut Tape | 2h | ||||||||
| MRFE6VP61K25HR6 | 29 | 1 | 1d | |||||||||
| 841-MRFE6VP61K25HR6 | 191 | 1 | Tape & Reel | 2h | ||||||||
| C1S233100241637 | 150 | 1 | Cut Tape | 21h |
技術仕様
Physical
MountScrew
Number of Pins5
Weight13.155199 g
Technical
Continuous Drain Current (ID)10 µA
Current Rating10 µA
Drain to Source Voltage (Vdss)133 V
Frequency230 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency230 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.333 kW
Min Operating Temperature-55 °C
Number of Elements2
Output Power1.25 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating133 V
Inventory History
3 month trend: -79.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
ドキュメント
NXP Semiconductors MRFE6VP61K25HR6のデータシートとメーカー資料をダウンロードする。
Future Electronics
Freescale Semiconductor
Farnell
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors MRFE6VP61K25HR6.
関連部品
NXP Semiconductors MRFE6VP100HR5
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
NXP Semiconductors MRFE6VP6300HR5
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
NXP Semiconductors MRFE6VP5600HR5
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
説明
NXP Semiconductors MRFE6VP61K25HR6の詳細は販売業者から提供されます。
RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;
メーカーの別名
NXP Semiconductorsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NXP Semiconductors は以下の名前でも知られているかもしれません：
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: -79.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
技術仕様
Physical
MountScrew
Number of Pins5
Weight13.155199 g
Technical
Continuous Drain Current (ID)10 µA
Current Rating10 µA
Drain to Source Voltage (Vdss)133 V
Frequency230 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency230 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.333 kW
Min Operating Temperature-55 °C
Number of Elements2
Output Power1.25 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating133 V
ドキュメント
NXP Semiconductors MRFE6VP61K25HR6のデータシートとメーカー資料をダウンロードする。
Future Electronics
Freescale Semiconductor
Farnell