Infineon IRLML2803TRPBF
Production
価格と在庫
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRLML2803TRPBF | 348,875 | 1 | Tape & Reel | 8h | ||||||||
| ST49189575 | 5,684 | 1 | 9h | |||||||||
| IRLML2803PBFCT-ND | 117,041 | 1 | Cut Tape | 8h | ||||||||
| IRLML2803TRPBF | 1,355 | 84 | 8h | |||||||||
| IRLML2803TRPBF | 5,280 | 1 | 1d |
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)1.2 A
Current12 A
Current Rating1.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time1.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance85 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation540 mW
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance250 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation540 mW
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time4 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time9 ns
Turn-On Delay Time3.9 ns
Voltage30 V
Voltage Rating (DC)30 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Inventory History
3 month trend: -5.61%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
ドキュメント
Infineon IRLML2803TRPBFのデータシートとメーカー資料をダウンロードする。
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Engineering Resources
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説明
Infineon IRLML2803TRPBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-20V
Infineon Technologies N channel HEXFET power MOSFET, 30 V, 1.2 A, SOT-23, IRLML2803TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
INTERNATIONAL RECTIFIER IRLML2803TRPBF / MOSFET N-CH 30V 1.2A SOT-23 IN
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 540 mW
Transistor NPN Mos IRLML2803 INTERNATIONAL RECTIFIER Ampere=1.2 V=30 SOt23
HEXFET Power MOSFET Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: DC Switches; Load Switch
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:1.2A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:Micro3 ;RoHS Compliant: Yes
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:0.85A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.3A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.4W; Power, Pd:0.4W; Quantity, Reel:3000; SMD Marking:1B; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.5V; Width, External:3.05mm; Width, Tape:8mm
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -5.61%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)1.2 A
Current12 A
Current Rating1.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time1.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance85 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation540 mW
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance250 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation540 mW
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time4 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time9 ns
Turn-On Delay Time3.9 ns
Voltage30 V
Voltage Rating (DC)30 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
ドキュメント
Infineon IRLML2803TRPBFのデータシートとメーカー資料をダウンロードする。
Newark
Future Electronics
Jameco
DigiKey
Farnell
Upverter