Infineon IRFZ44EPBF
Production
価格と在庫
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRFZ44EPBF | 3,190 | 1 | Tube | 2d | ||||||||
| IRFZ44EPBF | 542 | 10h | ||||||||||
| 70017053 | 76 | 1 | Bulk | 1d | ||||||||
| IRFZ44EPBF-ND | 13,303 | 1 | Tube | 1d | ||||||||
| IRFZ44EPBF | 345 | 15 | 1d |
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)48 A
Current Rating48 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance23 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation110 W
Rds On Max23 mΩ
Resistance23 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time70 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)60 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Inventory History
3 month trend: -22.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFZ44EPBF.
関連部品
InfineonIRFZ44VPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 16.5 Milliohms;ID 55A;TO-220AB;PD 115W;-55de
InfineonIRFZ46NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de
onsemiRFP50N06
Transistor RFP50N06 N-Channel MOSFET 60 Volt 50 Amp TO-220AB
説明
Infineon IRFZ44EPBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-220AB;PD 110W;VGS +/-20V
Single N-Channel 60 V 0.023 Ohm 60 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 60V 48A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 60V, 48A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:48A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ44EPBF.
MOSFET, N, 60V, 48A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:192A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 48 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 70 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 70 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -22.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)48 A
Current Rating48 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance23 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation110 W
Rds On Max23 mΩ
Resistance23 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time70 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)60 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm