Infineon IRFH5406TRPBF
Production
技術仕様
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance11.4 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time3.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.256 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.6 W
Manufacturer Package IdentifierIRFH5406TRPBF
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance14.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation46 W
Rds On Max14.4 mΩ
Resistance14.4 MΩ
Rise Time8.7 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time5.4 ns
Turn-On Delay Time5.4 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm
Inventory History
3 month trend: -7.67%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFH5406TRPBF.
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60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
説明
Infineon IRFH5406TRPBFの詳細は販売業者から提供されます。
Single N-Channel 60 V 14.4 mOhm 32 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Trans MOSFET N-CH 60V 11A 8-Pin QFN T/R - Product that comes on tape, but is not reeled
60V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R / MOSFET N-CH 60V 40A 8-PQFN
MOSFET, 60V, 40A, 14.4 mOhm, 23 nC Qg, PQFN 5x6
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 46 W
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W
Benefits: Low RDSon (less than 14.4 mOhms) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 2.7C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -7.67%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
技術仕様
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance11.4 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time3.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.256 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.6 W
Manufacturer Package IdentifierIRFH5406TRPBF
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance14.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation46 W
Rds On Max14.4 mΩ
Resistance14.4 MΩ
Rise Time8.7 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time5.4 ns
Turn-On Delay Time5.4 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm