Infineon IPP076N15N5AKSA1
Production
価格と在庫
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-IPP076N15N5AKSA1 | 245 | 1 | Tube | 2d | ||||||||
| 448-IPP076N15N5AKSA1-ND | 1,855 | 1 | Tube | 1d | ||||||||
| IPP076N15N5AKSA1 | 1,833 | 3 | 15h | |||||||||
| IPP076N15N5AKSA1 | 1,833 | 1 | 18h | |||||||||
| TMOS1310 | 350 | 50 | 1d |
技術仕様
Technical
Continuous Drain Current (ID)112 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)150 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance7.6 mΩ
Package Quantity500
Power Dissipation214 W
Turn-Off Delay Time20 ns
Turn-On Delay Time14 ns
Dimensions
Height20.7 mm
Inventory History
3 month trend: +18.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IPP076N15N5AKSA1.
説明
Infineon IPP076N15N5AKSA1の詳細は販売業者から提供されます。
Trans MOSFET N 150V 112A 3-Pin 0.0076 OHM PG-TO220-3
Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-220 Tube
Mosfet, N-Ch, 150V, 112A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:112A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.0059Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Rohs Compliant: Yes |Infineon IPP076N15N5AKSA1
Power Field-Effect Transistor, 112A I(D), 150V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications, PG-TO220-3, RoHS
Infineon SCT
The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. | Summary of Features: Lower R DS(on) without compromising FOM gd and FOM oss; Lower output charge; Ultra-low reverse recovery charge; Increased commutation ruggedness; Higher switching frequency possible | Benefits: Reduced paralleling; Size reduction enabled with SuperSO8 best-in-class; Higher power density designs; More rugged products; System cost reduction; Improved EMI behavior | Target Applications: Low voltage drives; Telecom; Solar
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +18.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
技術仕様
Technical
Continuous Drain Current (ID)112 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)150 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance7.6 mΩ
Package Quantity500
Power Dissipation214 W
Turn-Off Delay Time20 ns
Turn-On Delay Time14 ns
Dimensions
Height20.7 mm