Infineon IPB17N25S3100ATMA1
Production
価格と在庫
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ST64838691 | 1,000 | 1 | 10h | |||||||||
| 448-IPB17N25S3100ATMA1CT-ND | 1,764 | 1 | Cut Tape | 1d | ||||||||
| IPB17N25S3100ATMA1 | 965 | 28 | 1d | |||||||||
| IPB17N25S3100ATMA1 | 2 | 1 | Cut Tape | 1d | ||||||||
| TMOS2501 | 1,000 | 1K | 22h |
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time1.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.133 nF
Max Dual Supply Voltage250 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Package Quantity1000
PackagingTape & Reel
Power Dissipation107 W
Rds On Max100 mΩ
Rise Time3.7 ns
Schedule B8541290080
Turn-Off Delay Time7.5 ns
Turn-On Delay Time4.4 ns
Dimensions
Height4.4 mm
Length10 mm
Width9.25 mm
Inventory History
3 month trend: -10.29%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IPB17N25S3100ATMA1.
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説明
Infineon IPB17N25S3100ATMA1の詳細は販売業者から提供されます。
250V, N-Ch, 100 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
Infineon SCT
Trans MOSFET N-CH 250V 17A Automotive 3-Pin(2+Tab) TO-263 T/R
MOSFET, N-CH, AEC-Q100, 250V, 17A, TO263; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 107W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS T Series; Automotive Qualification Standard: AEC-Q100; MSL: -; SVHC: No SVHC (27-Jun-2018)
Power Field-Effect Transistor, 17A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -10.29%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time1.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.133 nF
Max Dual Supply Voltage250 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Package Quantity1000
PackagingTape & Reel
Power Dissipation107 W
Rds On Max100 mΩ
Rise Time3.7 ns
Schedule B8541290080
Turn-Off Delay Time7.5 ns
Turn-On Delay Time4.4 ns
Dimensions
Height4.4 mm
Length10 mm
Width9.25 mm