onsemi 2SK3707-1E
技術仕様
Physical
Case/PackageTO-220-3
Number of Pins3
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.15 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Rds On Max60 mΩ
Rise Time30 ns
Turn-Off Delay Time185 ns
Turn-On Delay Time19.5 ns
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for onsemi 2SK3707-1E.
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Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 17A Tc 39W Tc 100V -55C~175C TJ
説明
onsemi 2SK3707-1Eの詳細は販売業者から提供されます。
N-Channel Power MOSFET, 100V, 20A, 60mΩ, TO-220F-3SG
Tube Through Hole N-Channel Single Mosfet Transistor 20A Ta 20A 2W Ta 25W Tc 60ns
Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220ML Magazine
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
技術仕様
Physical
Case/PackageTO-220-3
Number of Pins3
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.15 nF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Rds On Max60 mΩ
Rise Time30 ns
Turn-Off Delay Time185 ns
Turn-On Delay Time19.5 ns