Vishay SIR880ADP-T1-GE3
$ 0.919
NRND
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SIR880ADP-T1-GE3 | 98 | 1 | Cut Tape | ||||||||
| Future Electronics | SIR880ADP-T1-GE3 | 3000 | 3K | Tape & Reel | ||||||||
| TME | SIR880ADP-T1-GE3 | 0 | 3K | 8h | ||||||||
| TTI | SIR880ADP-T1-GE3 | 0 | 3K | Tape & Reel | 10h | |||||||
| Avnet | SIR880ADP-T1-GE3 | 0 | 3K | 11h |
Cronologia dell'inventario
Tendenza a 3 mesi: -78.60%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Parti correlate
VishaySIR826ADP-T1-GE3
Vishay N channel TrenchFET power MOSFET, 80 V, 60 A, SOIC-8, SIR826ADP-T1-GE3
VishaySIR826DP-T1-GE3
SiR826DP Series 80 V 4.8 mOhm 60 nC SMT N-Channel MOSFET - POWERPAK-SO-8
Descrizioni
Descrizioni di Vishay SIR880ADP-T1-GE3 fornite dai suoi distributori.
N-Channel 80 V 8.9 mOhm 83 W SMT TrenchFET Power Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 80V 60A 8-Pin PowerPAK SO EP T/R
场效应管, MOSFET, N沟道, 80V, 60A, POWERPAKSO-8;
Power Field-Effect Transistor, 60A I(D), 80V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
5.4W(Ta),83W(Tc) 20V 3V@ 250¦ÌA 72nC@ 10V 1N 80V 6.3m¦¸@ 20A,10V 60A 2.289nF@40V SOP 6.15mm*5.15mm*1.04mm
MOSFET, N-CH, 80V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -78.60%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance6.3 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.289 nF
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements1
PackagingDigi-Reel®
Power Dissipation5.4 W
Rds On Max6.3 mΩ
Resistance8.9 MΩ
Schedule B8541290080
Threshold Voltage1.5 V
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità