Vishay SIR422DP-T1-GE3
$ 0.563
NRND
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Cronologia dell'inventario
Tendenza a 3 mesi: -21.46%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-25
Lifecycle StatusNRND (Last Updated: 4 months ago)
Parti correlate
InfineonIPI084N06L3GXKSA1
MOSFET N-CH 60V 50A TO262-3 / N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
InfineonIPI80N04S4L04AKSA1
MOSFET N-CH 40V 80A TO262-3 / N-Channel 40 V 80A (Tc) 71W (Tc) Through Hole PG-TO262-3
onsemiFQI32N12V2TU
Power Field-Effect Transistor, 32A I(D), 120V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Vishay SIR422DP-T1-GE3 fornite dai suoi distributori.
Trans MOSFET N-CH 40V 40A 8-Pin PowerPAK SO T/R / MOSFET N-CH 40V 40A PPAK SO-8
SIR422 Series 40 V 0.0066 Ohm 48 nC Single N-Channel Power Mosfet POWERPAK-SO-8
MOSFET, POWER, N-CH, VDSS 40V, RDS(ON) 0.0054OHM, ID 20A, POWERPAK SO-8, -55DE
Mosfet, N Ch, 40V, 40A, Powerpak So-8, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:34.7W Rohs Compliant: Yes |Vishay SIR422DP-T1-GE3.
MOSFET,N CH,DIODE,40V,40A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.5A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -21.46%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-262-3
MountSurface Mount, Through Hole
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)20.5 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance6.6 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.785 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation34.7 W
Manufacturer Package IdentifierS17-0173-Single
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
Power Dissipation5 W
Rds On Max6.6 mΩ
Resistance6.6 mΩ
Rise Time84 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time9 ns
Dimensions
Height1.12 mm
Length5.969 mm
Width5.0038 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità