Vishay SIR410DP-T1-GE3
$ 0.522
Production
Prezzo e stock
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIR410DP-T1-GE3CT-ND | 5297 | 1 | Cut Tape | ||||||||
| TME | SIR410DP-T1-GE3 | 0 | 3K | 16h | ||||||||
| TTI | SIR410DP-T1-GE3 | 0 | 3K | Tape & Reel | 18h | |||||||
| Newark | SIR410DP-T1-GE3 | 0 | 3K | Tape & Reel | ||||||||
| Avnet | SIR410DP-T1-GE3 | 0 | 3K | 19h |
Cronologia dell'inventario
Tendenza a 3 mesi: -11.51%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-30
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
VishaySIS410DN-T1-GE3
Single N-Channel 20 V 0.0048 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
VishaySIS454DN-T1-GE3
SIS454DN-T1-GE3 series 20 V 35 A 3.7 mOhm N-Channel PowerPAK 1212-8 Mosfet
VishaySIR496DP-T1-GE3
SIR496DP-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 26 A, 20 V, 8-PIN POWERPAK SO
Descrizioni
Descrizioni di Vishay SIR410DP-T1-GE3 fornite dai suoi distributori.
Trans MOSFET N-CH 20V 35A 8-Pin PowerPAK SO T/R / MOSFET N-CH 20V 35A PPAK SO-8
N-CHANNEL 20-V (D-S) MOSFET | Siliconix / Vishay SIR410DP-T1-GE3
N-CH POWERPAK SO-8 BWL 20V 4.8 MOHM@10V- LEAD(PB) AND HALOGEN FREE
MOSFET SIR410DP SO8FL N 0.0063R 20V 35A
Power Field-Effect Transistor, 23A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
4.2W(Ta),36W(Tc) 20V 2.5V@ 250¦ÌA 41nC@ 10 V 1N 20V 4.8m¦¸@ 20A,10V 35A 1.6nF@10V 6.15mm*5.15mm*1.04mm
MOSFET, N-CH, 20V, 35A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Power Dissipation Pd:36W; Voltage Vgs Max:20V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -11.51%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.6 nF
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max4.8 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage1.2 V
Turn-Off Delay Time30 ns
Turn-On Delay Time25 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità