Infineon IRF6710S2TRPBF
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6710S2TRPBF | 0 | 4800 | Bulk | 11h | |||||||
| Win Source | WS-IRF6710S2TRPBF | 30.900 | 100 | 19h | ||||||||
| Worldway Electronics | IRF6710S2TRPBF | 14.576 | 7 | Tape & Reel | 2d | |||||||
| ICPartonline | IRF6710S2TRPBF | 7330 | 4d | |||||||||
| Voyager Components | IRF6710S2TRPBF-IR-2010 | 15.128 | 44m |
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-05-11
LTD Date2018-05-11
Parti correlate
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Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Infineon IRF6710S2TRPBF fornite dai suoi distributori.
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:12mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0045ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins6
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.19 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation15 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.9 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation15 W
Rds On Max5.9 mΩ
Rise Time20 ns
Turn-Off Delay Time5.2 ns
Turn-On Delay Time7.9 ns
Dimensions
Height558.8 µm
Length4.826 mm
Width3.95 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità