Vishay SIHG22N60E-E3
$ 2.216
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.27%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Descrizioni
Descrizioni di Vishay SIHG22N60E-E3 fornite dai suoi distributori.
MOSFET, N CH, 600V, 21A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247AC
227W(Tc) 30V 4V@ 250¦ÌA 86nC@ 10 V 1N 600V 180m¦¸@ 11A,10V 21A 1.92nF@100V TO-247AC
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N CH, 600V, 21A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -0.27%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time54 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.92 nF
Max Operating Temperature150 °C
Max Power Dissipation227 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation227 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time68 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time59 ns
Turn-On Delay Time18 ns
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Dichiarazioni di conformità