onsemi FCH170N60
$ 2.99
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-05-26
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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STMicroelectronicsSTW24N60DM2
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package
Descrizioni
Descrizioni di onsemi FCH170N60 fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-247
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Rail
N-Channel SuperFET II MOSFET | MOSFET N-CH 600V 22A TO247
Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
MOSFET SuperFET2 600V, 170mohm
227W(Tc) 20V 3.5V@ 250¦ÌA 55nC@ 10V 1N 600V 170m¦¸@ 11A,10V 22A 2.86nF@380V TO-247-3 15.87mm*4.82mm*20.82mm
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time3.8 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.86 nF
Max Operating Temperature150 °C
Max Power Dissipation227 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max170 mΩ
Rise Time12 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time21 ns
Dimensions
Height20.82 mm
Length15.87 mm
Width4.82 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità