Vishay SIHB12N50E-GE3

Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
$ 1.121
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Farnell

Datasheet9 pagine10 anni fa
Datasheet7 pagine11 anni fa

Newark

Future Electronics

Cronologia dell'inventario

Trend di 3 mesi:
-3.74%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-01-19
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Vishay SIHB12N50E-GE3 fornite dai suoi distributori.

Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-263-3
114W(Tc) 30V 4V@ 250¦ÌA 50nC@ 10 V 1N 500V 380m¦¸@ 6A,10V 10.5A 886pF@100V TO-263-3
VISHAY SIHB12N50E-GE3 MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

Alias del produttore

Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
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  • VISHA
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  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
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  • Vishay General Semiconductor - Diodes Division
  • Vishay Semiconductor Opto Division
  • VSHAY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY ELECTRONIC
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY OPTO
  • VISHAY FOIL RESISTORS
  • Vishay Polytech
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  • Vishay Draloric