Vishay SIHB12N50E-GE3
$ 1.121
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI | SIHB12N50E-GE3 | 0 | 1K | Tube | 3d | |||||||
| Newark | SIHB12N50E-GE3 | 0 | 1 | Cut Tape | ||||||||
| Avnet | SIHB12N50E-GE3 | 0 | 1K | 2d | ||||||||
| TTI Asia | SIHB12N50E-GE3 | Contatto | 1h | |||||||||
| TTI Europe | SIHB12N50E-GE3 | 0 | 1K | Tube | 1h |
Cronologia dell'inventario
Tendenza a 3 mesi: -3.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-01-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
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N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in D2PAK package
VishaySIHB12N65E-GE3
E Series N-Channel 650 V 380 mO 35 nC Surface Mount Power Mosfet - D2PAK
Descrizioni
Descrizioni di Vishay SIHB12N50E-GE3 fornite dai suoi distributori.
Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-263-3
114W(Tc) 30V 4V@ 250¦ÌA 50nC@ 10 V 1N 500V 380m¦¸@ 6A,10V 10.5A 886pF@100V TO-263-3
VISHAY SIHB12N50E-GE3 MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -3.74%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)10.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)500 V
Input Capacitance886 pF
Max Operating Temperature150 °C
Max Power Dissipation114 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Rds On Max380 mΩ
Threshold Voltage4 V