Vishay SIA448DJ-T1-GE3

MOSFET, N-CH, 20V, 12A, POWERPAK SC70-6; Transistor Polarity: N Channel; Continuo
Obsolete
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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Vishay SIA448DJ-T1-GE3.

IHS

Datasheet9 pagine10 anni fa

Newark

Farnell

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Vishay SIA448DJ-T1-GE3 fornite dai suoi distributori.

MOSFET, N-CH, 20V, 12A, POWERPAK SC70-6; Transistor Polarity:N Channel; Continuo
Trans MOSFET N-CH 20V 12A 6-Pin PowerPAK SC-70 T/R
Power Field-Effect Transistor, 12A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 20V 12A PPAK SC70-6
MOSFET 20V 12A 19.2W 15mohm @ 4.5V
MOSFET N-CH, 20V, SC70-6L; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:19.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

Alias del produttore

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  • VIS
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  • VSHAY
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  • VISHAY ELECTRONIC
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  • Vishay Semiconductor Diodes Division
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