Vishay SI9945AEY-T1-E3
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | SI9945AEY-T1-E3 | 0 | 1 | Cut Tape | 3h | |||||||
| element14 APAC | SI9945AEY-T1-E3 | 0 | 1 | Cut Tape | 17h | |||||||
| Microchip USA | SI9945AEY-T1-E3 | 1387 | 600 | 4d | ||||||||
| Win Source | WS-SI9945AEY-T1-E3 | 2293 | 12 | 5h | ||||||||
| Aztech | SI9945AEY-T1-E3 | 251 | 3d |
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-11-04
LTD Date2011-05-04
Parti correlate
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SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
Diodes Inc.DMN6066SSD-13
DMN6066SSD Series 60 V 66 mOhm Dual N-Channel Enhancement Mode Mosfet - SOIC-8
Diodes Inc.ZXMP6A17N8TC
Single P-Channel 60 V 0.19 Ohm 9 nC 2.5 mW Silicon SMT Mosfet - SOIC-8
Descrizioni
Descrizioni di Vishay SI9945AEY-T1-E3 fornite dai suoi distributori.
Trans MOSFET N-CH 60V 3.7A 8-Pin SOIC N T/R
MOSFET, POWER; DUAL N; 60 V; + 20 V; 2.4 W; SO-8; 75 A (CONTINUOUS); -55 DEGC
DUAL N-CHANNEL 60-V (D-S), 175 DEGREE CELSIUS MOSFET Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, N, SO-8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.4W; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:3.7A; Current Id Max:3.7A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):80mohm; Package / Case:SOIC; Power Dissipation Pd:2.4W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels2
Number of Elements2
Power Dissipation2.4 W
Rise Time10 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time21 ns
Turn-On Delay Time9 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità