Vishay SI9945AEY
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.98
Stock
33,680
1,356,441
Authorized Distributors
0
6
Mount
-
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
3.7 A
4 A
Threshold Voltage
-
1.7 V
Rds On Max
-
55 mΩ
Gate to Source Voltage (Vgs)
20 V
15 V
Power Dissipation
2.4 W
2 W
Input Capacitance
-
1.03 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2006-06-30
LTD Date2006-09-30
Descrizioni
Descrizioni di Vishay SI9945AEY fornite dai suoi distributori.
Power Field-Effect Transistor, 3.7A I(D), N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 3.7A 8-Pin SOIC
MOSFET 2N-CH 60V 3.7A 8SOIC
60V, N-CH 80Mohm 175 DEG.C, TRENCH
MOSFETs 60V 3.7A 2.4W
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Case/PackageSOIC
Number of Pins8
Number of Terminals8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.4 W
Rise Time10 ns
Turn-Off Delay Time21 ns
Turn-On Delay Time9 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm