Vishay SI7465DP-T1-E3
$ 0.617
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI7465DP-T1-E3 | 6000 | 3K | 2d | ||||||||
| Newark | SI7465DP-T1-E3 | 3000 | 1 | Cut Tape | ||||||||
| Arrow Electronics | SI7465DP-T1-E3 | 719 | 1 | |||||||||
| Verical | SI7465DP-T1-E3 | 3000 | 3K | |||||||||
| Future Electronics | SI7465DP-T1-E3 | 33.000 | 3K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: +32.68%
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1 parte disponibile
Schede tecniche e documenti
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Questo componente
Parti alternative
Price @ 1000
$ 0.617
$ 0.618
Stock
839,037
614,778
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
-
SOIC
Drain to Source Voltage (Vdss)
-60 V
-60 V
Continuous Drain Current (ID)
3.2 A
3.2 A
Threshold Voltage
-3 V
-3 V
Rds On Max
64 mΩ
64 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.5 W
1.5 W
Input Capacitance
-
-
Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
Diodes Inc.DMN6070SSD-13
DMN6070 Series 60 V 3.3 A 80 mOhm Dual N-Ch. Enhancement Mode Mosfet - SOIC-8
VishaySI7415DN-T1-E3
Single P-Channel 60 V 0.065 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8
VishaySI7220DN-T1-E3
Dual N-Channel 60 V 0.06 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8
onsemiCPH6445-TL-W
Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Vishay SI7465DP-T1-E3 fornite dai suoi distributori.
SI7465DP-T1-E3 P-CHANNEL MOSFET TRANSISTOR, 3.2 A, 60 V, 8-PIN SOIC
Single P-Channel 60 V 64 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
P-CHANNEL 60-V (D-S) MOSFET Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P, PPAK SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:60V; Current, Id Cont:5A; Resistance, Rds On:0.064ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:-3V; Case Style:PowerPAK; ;RoHS Compliant: Yes
MOSFET, P, PPAK SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):64mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Rise Time:9ns; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: +32.68%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance64 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.5 W
Rds On Max64 mΩ
Resistance64 mΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time65 ns
Turn-On Delay Time8 ns
Dimensions
Height1.12 mm
Length4.9 mm
Width5.89 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SI7465DP-T1-E3.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità