Vishay SI7415DN-T1-GE3
$ 0.875
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 16P3845 | 2850 | 3K | 1d | ||||||||
| Newark | SI7415DN-T1-GE3 | 2850 | 1 | Cut Tape | ||||||||
| Arrow Electronics | SI7415DN-T1-GE3 | 3000 | 3K | |||||||||
| Verical | SI7415DN-T1-GE3 | 3000 | 3K | |||||||||
| Rutronik | LVMOS1044 | 3000 | 3K | 10h |
Cronologia dell'inventario
Tendenza a 3 mesi: -25.87%
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Price @ 1000
$ 0.875
$ 0.875
Stock
721,367
1,254,566
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
-
Drain to Source Voltage (Vdss)
-60 V
-60 V
Continuous Drain Current (ID)
3.6 A
3.6 A
Threshold Voltage
1 V
-3 V
Rds On Max
65 mΩ
65 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
1.5 W
Input Capacitance
-
-
Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-18
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descrizioni
Descrizioni di Vishay SI7415DN-T1-GE3 fornite dai suoi distributori.
Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 60V 3.6A 1212-8
Power Field-Effect Transistor, 3.6A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IC INTERFACE SPECIALIZED 14SOIC
P-CH -60V -5,7A 54mOhm PPAK1212-8
Mosfet, P Channel, 60V, 3.6A, Ppak So8; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: No |Vishay SI7415DN-T1-GE3.
MOSFET, P CH, 60V, 3.6A, PPAK SO8; Transistor Polarity:P Channel; Drain Source Voltage Vds:-60V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.6A; Power Dissipation Pd:1.5W; Voltage Vgs Max:20V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -25.87%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.8 W
Manufacturer Package IdentifierSI7415DN-T1-GE3
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
Power Dissipation3.8 W
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time12 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time22 ns
Turn-On Delay Time12 ns
Dimensions
Height1.12 mm
Length3.05 mm
Width3.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità