Vishay SI7178DP-T1-GE3
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI | SI7178DP-T1-GE3 | 0 | 3K | Tape & Reel | 6h | |||||||
| Newark | SI7178DP-T1-GE3 | 0 | 3K | Tape & Reel | ||||||||
| TTI Asia | SI7178DP-T1-GE3 | Contatto | 7h | |||||||||
| Avnet | SI7178DP-T1-GE3 | 0 | 3K | 6h | ||||||||
| Weyland Electronics Group Pte. Ltd. | SI7178DP-T1-GE3 | 2294 | 1 | Tape & Reel | 4h |
Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-08
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Parti correlate
Descrizioni
Descrizioni di Vishay SI7178DP-T1-GE3 fornite dai suoi distributori.
Single N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
N-CHANNEL 100-V (D-S) MOSFET | Siliconix / Vishay SI7178DP-T1-GE3
N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 100V 60A PPAK SO-8
N CHANNEL MOSFET, 100V, 60A, PowerPAK; T; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:6.25W; Operating Temperature Range:-55°C to +150°C; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:104W; Power Dissipation Pd:6.25W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Specifiche tecniche
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)14.9 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.87 nF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4.5 V
Number of Channels1
Number of Elements1
Power Dissipation6.25 W
Rds On Max14 mΩ
Resistance14 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time27 ns
Turn-On Delay Time21 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità