Vishay SI2312BDS-T1-GE3
$ 0.306
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SI2312BDS-T1-GE3 | 0 | 3 | 6h | ||||||||
| TTI | SI2312BDS-T1-GE3 | 0 | 3K | Tape & Reel | 20h | |||||||
| Newark | SI2312BDS-T1-GE3 | 0 | 3K | Tape & Reel | ||||||||
| TTI Asia | SI2312BDS-T1-GE3 | Contatto | 1d | |||||||||
| Avnet | SI2312BDS-T1-GE3 | 0 | 3K | 5d |
Cronologia dell'inventario
Tendenza a 3 mesi: -6.75%
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SI2312BDS-T1-GE3.
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Price @ 1000
$ 0.306
$ 0.224
$ 0.224
Stock
1,530,429
2,444,570
2,444,570
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
20 V
20 V
20 V
Continuous Drain Current (ID)
3.9 A
4.2 A
4.2 A
Threshold Voltage
8 V
-
-
Rds On Max
31 mΩ
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
8 V
Power Dissipation
750 mW
780 mW
780 mW
Input Capacitance
-
829.9 pF
829.9 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-01-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-02-13
LTD Date2025-08-13
Parti correlate
Descrizioni
Descrizioni di Vishay SI2312BDS-T1-GE3 fornite dai suoi distributori.
Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV; Power Dissipation:750mW; No. of Pins:3PinsRoHS Compliant: No
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:8V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:30ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -6.75%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs8 V
Number of Channels1
Number of Elements1
Power Dissipation750 mW
Rds On Max31 mΩ
Resistance31 mΩ
Rise Time30 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage8 V
Turn-Off Delay Time35 ns
Turn-On Delay Time9 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Vishay SI2312BDS-T1-GE3.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità