Vishay IRFSL9N60APBF
$ 1.438
Production
Prezzo e stock
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRFSL9N60APBF-ND | 641 | 1 | Tube | ||||||||
| TME | IRFSL9N60APBF | 0 | 1 | 19h | ||||||||
| TTI | IRFSL9N60APBF | 0 | 1K | Tube | 2d | |||||||
| Newark | IRFSL9N60APBF | 0 | 1K | |||||||||
| Future Electronics | IRFSL9N60APBF | 0 | 50 | Tube |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-12-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
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onsemiFQI10N60CTU
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
onsemiFQI12N60TU
MOSFET N-CH 600V 10.5A I2PAK / Trans MOSFET N-CH 600V 10.5A 3-Pin(3+Tab) I2PAK Rail
STMicroelectronicsSTI10N62K3
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAK package
Descrizioni
Descrizioni di Vishay IRFSL9N60APBF fornite dai suoi distributori.
Single N-Channel 600 V 0.75 Ohms Through Hole Power Mosfet - I2PAK (TO-262)
Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262
170W(Tc) 30V 4V@ 250¦ÌA 49nC@ 10 V 1N 600V 750m¦¸@ 5.5A,10V 9.2A 1.4nF@25V I2PAK 10.67mm*4.83mm*9.65mm
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
NCHAN, SMD-220, 600V IRFSL9N60APBF
MOSFET, N CH, 600V, 9.2A, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.387001 g
Technical
Continuous Drain Current (ID)9.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation170 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità