Vishay IRF640STRRPBF
$ 0.823
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | IRF640STRRPBF | 207 | 7 | |||||||||
| Arrow Electronics | IRF640STRRPBF | 207 | 1 | |||||||||
| TME | IRF640STRRPBF | 0 | 800 | 13h | ||||||||
| TTI | IRF640STRRPBF | 0 | 800 | Tape & Reel | 2h | |||||||
| Newark | IRF640STRRPBF | 0 | 800 | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -47.56%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.823
$ 1.06
$ 1.06
Stock
132,035
115,042
115,042
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
200 V
200 V
200 V
Continuous Drain Current (ID)
18 A
18 A
18 A
Threshold Voltage
-
4 V
4 V
Rds On Max
180 mΩ
180 mΩ
180 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
130 W
3.1 W
3.1 W
Input Capacitance
1.3 nF
1.3 nF
1.3 nF
Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
Parti correlate
InfineonIRF640NSTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSTRRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
Descrizioni
Descrizioni di Vishay IRF640STRRPBF fornite dai suoi distributori.
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 18A Tc 18A 130W 36ns
3.1W(Ta),130W(Tc) 20V 4V@ 250¦ÌA 70nC@ 10 V 1N 200V 180m¦¸@ 11A,10V 18A 1.3nF@25V D2PAK,TO-263
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -47.56%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation130 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time51 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità