TT Electronics OPB860N51
$ 2.68
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
0 modelli disponibili
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0 parti disponibili
Supply Chain
Country of OriginMexico
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 2 months ago)
Descrizioni
Descrizioni di TT Electronics OPB860N51 fornite dai suoi distributori.
880nm Through-Beam 3.18mm 5μs Phototransistor wire mounting，base mount 12.32mm*6.35mm*10.8mm
Optical Switches, Transmissive, Phototransistor Output Slotted Opt Switch
SENSOR, SLOTTED OPTICAL SWITCH, 3.18MM SLOT, 2V EMITTER, 30V DETECTOR, 30 MA
Photointerrupter Transmissive 3.18mm Phototransistor 4-Pin Bag
Transistor Output Slotted Switch, 1-Channel, 3.11mm Slot Width
|Tt Electronics/optek Technology OPB860N51
SENSOR OPT SLOT PHOTOTRANS MODUL
Alias del produttore
TT Electronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. TT Electronics può anche essere conosciuto con i seguenti nomi:
- TT Electronics/BI
- TT Electronics/Optek Technology
- TT Electronics/IRC
- TT ELECTRONICS PLC
- TT Electronics/BI Magnetics
- TT Electronics/Welwyn
- IRC/TT Electronics
- TT Electronics / BI Technologies
- TT Electronics Resistors
- TT Electronics - IoT Solutions
- TT Electronics Welwyn Components
- TT Electronics/Power Partners Inc
- TT ELECTRONICS/IRC [MIL]
- TTELEC
- Optek Technology/TT Electronics
- TT ELECT
- TT ELECTRONICS/IRC (VA)
- BI Technologies / TT Electronics
- TT ELECTRONICS/ROXSPUR MEASUREMENT & CONTROL LTD
- TT ELECTRONICS - POWER PARTNERS
- TT ELECTRONICS GMBH
- TT/IRC
- AB CONNECTORS
- TT ELECTRONICS / AB CONNECTORS
- TT ELECTRONI
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
0 modelli disponibili
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountChassis Mount, Through Hole
Number of Pins4
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Forward Current50 mA
Max Collector Current30 mA
Max Operating Temperature85 °C
Min Operating Temperature-40 °C
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
PackagingBulk
Power Dissipation100 mW
Reverse Breakdown Voltage2 V
Sensing Distance3.175 mm
TouchscreenInfrared (IR)
Wavelength880 nm