Taiwan Semiconductor MBR3060CT
$ 0.734
Production
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Schede tecniche e documenti
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Questo componente
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Price @ 1000
$ 0.734
$ 0.674
Stock
18,495
354,128
Authorized Distributors
1
5
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220-3
Forward Voltage
770 mV
650 mV
Reverse Voltage (DC)
-
-
Average Rectified Current
-
15 A
Max Reverse Leakage Current
200 µA
-
Reverse Recovery Time
25 ns
-
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di Taiwan Semiconductor MBR3060CT fornite dai suoi distributori.
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, TO-220AB
DIODE ARR SCHOTT 60V 30A TO220AB
DIODE ARRAY SCHOTTKY 60V TO220AB
TO220 30A 60V DUAL SCHTKY RECT
Alias del produttore
Taiwan Semiconductor ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Taiwan Semiconductor può anche essere conosciuto con i seguenti nomi:
- TAIWAN SEMI
- TSC
- TAIWAN
- Taiwan Semiconductor Corporation
- TAIWAN SEMICONDUCTOR CO LTD
- TAIWAN SEM
- TAIWAN SEMICONDUCTOR MANF
- TAIWAN SEMICOND
- TAIW
- Taiwan Semiconductor Company
- Taiwan Semiconductor(Taiwan Semicon)
- SEMICONDUCTO
- Taiwan Semiconductors
- Taiwan Semiconduct
- TSC (Taiwan Semiconductor)
- Taiwan Semiconductor Co
- Taiwan Semiconductor(TSC)
- TWAN
- SEMICONDCTOR
- Won-Top Electronics
- TAIWAN SEMICONDUSTOR
- Taiwan Semiconductor Manufacturing Company Limited
- Taiwan Semiconductor Europe GmbH
- TAWIN SEMI
- TAIWAN OHM
Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Element ConfigurationCommon Cathode
Forward Current30 A
Forward Voltage770 mV
Max Forward Surge Current (Ifsm)200 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current15 A
Max Repetitive Reverse Voltage (Vrrm)60 V
Max Reverse Leakage Current200 µA
Max Surge Current200 A
Min Operating Temperature-65 °C
Number of Elements2
Peak Reverse Current200 µA
Power Dissipation400 mW
Reverse Recovery Time25 ns
Reverse Standoff Voltage60 V
Dimensions
Height8.24 mm
Length10.5 mm
Width4.7 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Taiwan Semiconductor MBR3060CT.