STMicroelectronics STW30NM50N
Obsolete
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| element14 APAC | STW30NM50N | 0 | 1 | 7h | ||||||||
| Farnell | STW30NM50N | 0 | 1 | 18h | ||||||||
| Microchip USA | STW30NM50N | 1476 | 300 | Tray | 10h | |||||||
| Win Source | WS-STW30NM50N | 20 | 7 | 18h | ||||||||
| Worldway Electronics | STW30NM50N | 18.424 | 7 | Tube | 17h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STW30NM50N.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-10-27
LTD Date2012-04-27
Parti correlate
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N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package
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N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-247 package
STMicroelectronicsSTW34N65M5
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-247 package
InfineonIPW65R110CFDAFKSA1
N-Channel 650 V 31.2 A 277.8 W 110 mOhm Through Hole Mosfet - PG-TO247-3
Descrizioni
Descrizioni di STMicroelectronics STW30NM50N fornite dai suoi distributori.
N-channel 500 V, 0.090 Ohm, 27 A MDmesh" II Power MOSFET
Power Field-Effect Transistor, 27A I(D), 500V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N CH, 500V, 27A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
MOSFET N CH 500V 27A TO-247; Transistor Polarity:N Channel; On Resistance Rds(on):90mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; Continuous Drain Current Id:13.5A; Package / Case:TO-247; ;RoHS Compliant: Yes
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Specifiche tecniche
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance115 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.74 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max115 mΩ
Resistance115 mΩ
Rise Time20 ns
Threshold Voltage3 V
Turn-Off Delay Time115 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STW30NM50N.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant