STMicroelectronics STW10NK80Z
$ 2.54
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.19%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
Parti correlate
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N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package
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Power MOSFET, General Purpose, N Channel, 800 V, 11 A, 0.39 ohm, TO-247, Through Hole
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MOSFET N-CH 900V 11A TO247-3 / N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-1
Descrizioni
Descrizioni di STMicroelectronics STW10NK80Z fornite dai suoi distributori.
N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package
STW10NK80Z N-CHANNEL MOSFET TRANSISTOR, 9 A, 800 V, 3-PIN TO-247
Power MOSFET, N Channel, 800 V, 9 A, 0.9 ohm, TO-247, Through Hole
Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube
Power MOSFET Transistors N-Ch 800 Volt 9 Amp
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=800 V, 9 A, TO-247, , 3
N-CH 800V 9A 900mOhm TO247-3 RoHSconf
Power MOSFETs, 800V, 9A, TO-247, Tube
STMicroelectronics SCT
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.78ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: -1.19%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.18 nF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation160 W
Rds On Max900 mΩ
Resistance900 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time65 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)800 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant