STMicroelectronics STU2NK100Z
$ 0.632
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Cronologia dell'inventario
Tendenza a 3 mesi: -9.69%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-17
Lifecycle StatusProduction (Last Updated: 1 month ago)
Parti correlate
STMicroelectronicsSTD2NK90Z-1
N-CHANNEL 900V - 5.5 Ohm - 2.1A - DPAK ZENER-PROTECTED SUPERMESH MOSFET
Descrizioni
Descrizioni di STMicroelectronics STU2NK100Z fornite dai suoi distributori.
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in IPAK package
MOSFET N-CH 1000V 1.85A IPAK / N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole I-PAK
STU2NK100Z N-CHANNEL MOSFET TRANSISTOR, 1.85 A, 1000 V, 3-PIN TO-251
N-CHANNEL 1000 V-6.25 OHM-1.85 A-IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N CH, 1000V, 1.85A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.85A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):6.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
Mosfet, N Ch, 1Kv, 1.85A, To-251; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:1.85A; Tensión Drenaje-Fuente Vds:1Kv; Resistencia De Activación Rds(On):6.25Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STU2NK100Z
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: -9.69%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.85 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance8.5 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time32.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance499 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max8.5 Ω
Rise Time6.5 ns
Threshold Voltage3.75 V
Turn-Off Delay Time41.5 ns
Turn-On Delay Time7.2 ns
Dimensions
Height6.9 mm
Length6.6 mm
Width2.4 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant