STMicroelectronics STI270N4F3
$ 2.55
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | STI270N4F3 | 0 | 5 | Bulk | 12h | |||||||
| Avnet | STI270N4F3 | 0 | 1K | 2d | ||||||||
| Farnell | STI270N4F3 | 0 | 1 | 19h | ||||||||
| Microchip USA | STI270N4F3 | 302 | 600 | Tube | 14h | |||||||
| Win Source | WS-STI270N4F3 | 20 | 10 | 21h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STI270N4F3.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-07
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2022-11-11
LTD Date2023-05-11
Parti correlate
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Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
InfineonIPI120N04S401AKSA1
40V, N-Ch, 1.9 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
STMicroelectronicsSTB100NF03L-03-1
N-channel 30 V, 0.0026 Ohm typ., 100 A StripFET(TM) II Power MOSFET in a D2PAK package
STMicroelectronicsSTI400N4F6
N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
Descrizioni
Descrizioni di STMicroelectronics STI270N4F3 fornite dai suoi distributori.
STMICROELECTRONICS STI270N4F3 MOSFET Transistor, N Channel, 80 A, 40 V, 2.1 mohm, 10 V, 4 V
N-channel 40 V, 2.1 mOhm typ., 160 A STripFET F3 PowerMOSFET in I2PAK package
STI270N4F3 N-CHANNEL MOSFET TRANSISTOR, 120 A, 40 V, 3-PIN I2PAK
Power Field-Effect Transistor, 120A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N CH, 40V, 120A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:I2-PAK; Power Dissipation Pd:330W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Specifiche tecniche
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.4 nF
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation330 W
Rds On Max2.6 mΩ
Rise Time180 ns
Threshold Voltage4 V
Turn-Off Delay Time110 ns
Turn-On Delay Time22 ns
Dimensions
Height10.75 mm
Length10.4 mm
Width4.6 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STI270N4F3.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant