onsemi FDI9406-F085
$ 1.429
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDI9406_F085 | 400 | 197 | |||||||||
| Avnet | FDI9406-F085 | 1200 | 736 | 2d | ||||||||
| Rochester Electronics | FDI9406-F085 | 5600 | 17h | |||||||||
| Flip Electronics | FDI9406-F085 | 1200 | >1wk | |||||||||
| Microchip USA | FDI9406-F085 | 141 | 300 | Bulk | 12h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-01-29
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Parti correlate
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40V, N-Ch, 2.1 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
InfineonIPI120N04S401AKSA1
40V, N-Ch, 1.9 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
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STMICROELECTRONICS STI270N4F3 MOSFET Transistor, N Channel, 80 A, 40 V, 2.1 mohm, 10 V, 4 V
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Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di onsemi FDI9406-F085 fornite dai suoi distributori.
PowerTrench® MOSFET, N-Channel, 40V, 110A, 2.2mΩ
Trans MOSFET N-CH 40V 110A Automotive 3-Pin TO-262AB Tube
RAIL / N-Channel Power Trench MOSFET
Power Field-Effect Transistor, 110A I(D), 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
176W(Tj) 20V 4V@ 250¦ÌA 138nC@ 10 V 1N 40V 2.2m¦¸@ 80A,10V 110A 7.71nF@25V I2PAK,TO-262 10.29mm*4.83mm*7.88mm
FDI9406 - N-CHANNEL POWERTRENCH
110A, 40V, 0.0022OHM, N-CHANNEL
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.71 nF
Max Operating Temperature175 °C
Max Power Dissipation176 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation176 W
Rds On Max2.2 mΩ
Rise Time48 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time28 ns
Conformità
Classificazione ambientale
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità