STMicroelectronics STGP10M65DF2
$ 0.615
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STGP10M65DF2 | 1000 | 1K | Tube | ||||||||
| Newark | STGP10M65DF2 | 100 | 1 | |||||||||
| DigiKey | 497-15840-5-ND | 1848 | 1 | Tube | ||||||||
| TME | STGP10M65DF2 | 0 | 1 | 13h | ||||||||
| Avnet | STGP10M65DF2 | 0 | 2K | 3d |
Cronologia dell'inventario
Tendenza a 3 mesi: +44.44%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-04-27
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descrizioni
Descrizioni di STMicroelectronics STGP10M65DF2 fornite dai suoi distributori.
Trench gate field-stop IGBT M series, 650 V 10 A low loss
Trans IGBT Chip N-CH 650V 20A 115mW 3-Pin(3+Tab) TO-220AB Tube
STMICROELECTRONICS STGP10M65DF2 IGBT Single Transistor, 20 A, 1.55 V, 115 W, 650 V, TO-220, 3 Pins
IGBT, SINGLE, 650V, 20A, TO-220-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 115W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pi
Igbt, Single, 650V, 20A, To-220; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:115W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGP10M65DF2
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: +44.44%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Forward Current10 A
Forward Voltage1.5 V
Max Collector Current20 A
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time96 ns
Schedule B8541290080