Infineon IKP10N60TXKSA1

Trans IGBT Chip N-CH 600V 24A 110mW Automotive 3-Pin(3+Tab) TO-220AB Tube
$ 0.674
Obsolete
Pagina del produttoreScheda dati

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NewarkIKP10N60TXKSA111121
Arrow ElectronicsIKP10N60TXKSA14871
DigiKey448-IKP10N60TXKSA1-ND521Tube
AvnetIKP10N60TXKSA101K
3d
FarnellIKP10N60TXKSA110401
18h

Schede tecniche e documenti

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IHS

Datasheet13 pagine10 anni fa
Datasheet13 pagine10 anni fa

element14 APAC

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TME

Farnell

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Supply Chain

Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-07
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2026-03-15
LTD Date2026-09-15

Parti correlate

STMicroelectronicsSTGP10NC60KD
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220
Dettagli
InfineonIGP10N60TXKSA1
IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3
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STMicroelectronicsSTGP10NC60HD
STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220
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STMicroelectronicsSTGP10M65DF2
Trench gate field-stop IGBT M series, 650 V 10 A low loss
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InfineonIKA15N60TXKSA1
600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS
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onsemiSGP23N60UFTU
Trans IGBT Chip N=-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Rail
Dettagli

Descrizioni

Descrizioni di Infineon IKP10N60TXKSA1 fornite dai suoi distributori.

Trans IGBT Chip N-CH 600V 24A 110mW Automotive 3-Pin(3+Tab) TO-220AB Tube
Verical
Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3
TodayComponents
600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS
Infineon SCT
IGBT, General Purpose, 20 A, 2.05 V, 110 W, 600 V, TO-220, 3 Pins
EBV Elektronik
L LOSS DUOPACK: IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
ComSIT Distribution GmbH
IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
element14 APAC
Hard-switching 600 V, 10 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Infineon

Immagini

RS
Newark
TME
LZChips
South Microelectronics

Alias del produttore

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IKP10N60T
  • SP000683062