STMicroelectronics STB6NK90ZT4
$ 1.582
Production
Prezzo e stock
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STB6NK90ZT4 | 9000 | 1K | 1d | ||||||||
| Newark | STB6NK90ZT4 | 10 | 1 | Cut Tape | ||||||||
| Arrow Electronics | STB6NK90ZT4 | 3000 | 1K | |||||||||
| Verical | STB6NK90ZT4 | 3000 | 1K | |||||||||
| DigiKey | 497-6555-1-ND | 1984 | 1 | Cut Tape |
Cronologia dell'inventario
Tendenza a 3 mesi: -6.27%
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Descrizioni
Descrizioni di STMicroelectronics STB6NK90ZT4 fornite dai suoi distributori.
N-channel 900 V, 1.56 Ohm, 5.8 A D2PAK Zener-protected SuperMESH(TM) Power MOSFET
STB6NK90ZT4 N-CHANNEL MOSFET TRANSISTOR, 5.8 A, 900 V, 3-PIN D2PAK
N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a D2PAK package
Ciiva
Power MOSFET, N Channel, 900 V, 2.9 A, 2 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 900V 5.8A 3-Pin (2+Tab) D2PAK T/R
Single N-Channel 900 V 2 Ohm 60.5 nC 140 W Silicon SMT Mosfet - TO-263-3
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=900 V, 5.8 A, D2PAK (TO-263), , 3
MOSFET, N CH, 900V, 5.8A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:5.8A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: -6.27%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight4.535924 g
Technical
Continuous Drain Current (ID)5.8 A
Current Rating5.8 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.35 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
PackagingTape and Reel
Power Dissipation140 W
Rds On Max2 Ω
Resistance1.56 Ω
Rise Time45 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time20 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)900 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant