STMicroelectronics STB6NK60ZT4
$ 1.072
Production
Prezzo e stock
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Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STB6NK60ZT4 | 4611 | 1 | Cut Tape | ||||||||
| Arrow Electronics | STB6NK60ZT4 | 4000 | 1K | |||||||||
| Verical | STB6NK60ZT4 | 4000 | 1K | |||||||||
| DigiKey | 497-12537-1-ND | 776 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | STB6NK60ZT4 | 0 | 5 | Bulk | 19h |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.11%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
STMicroelectronicsSTB9NK50ZT4
STB9NK50ZT4 N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN D2PAK
STMicroelectronicsSTB9NK60ZT4
N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
Descrizioni
Descrizioni di STMicroelectronics STB6NK60ZT4 fornite dai suoi distributori.
N-channel 600 V - 1 Ohm - 6 A - D2PAK Zener-Protected SuperMESH(TM) Power MOSFET
STB6NK60ZT4 N-CHANNEL MOSFET TRANSISTOR, 6 A, 600 V, 3-PIN D2PAK
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 600V 6A D2PAK
Power MOSFET, N Channel, 600 V, 3 A, 1 ohm, TO-263 (D2PAK), Surface Mount
110W(Tc) 30V 4.5V@ 100¦ÌA 46nC@ 10 V 1N 600V 1.2¦¸@ 3A,10V 6A 905pF@25V D2PAK 4.83mm
Single N-Channel 600 V 1.2 Ohm 46 nC 110 W Silicon SMT Mosfet - TO-263-3
MOSFET, N CH, 600V, 6A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Mosfet, N Channel, 600V, 6A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:3A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):1Ohm; Tensión Vgs De Medición Rds(On):10V; Núm. De Contactos:3 |Stmicroelectronics STB6NK60ZT4
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: -0.11%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance905 pF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max1.2 Ω
Rise Time14 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time47 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)600 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant