STMicroelectronics STB10NK60ZT4

Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
$ 1.589
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DistributorSKUMinPkg
NewarkSTB10NK60ZT414821
VericalSTB10NK60ZT440001K
Arrow ElectronicsSTB10NK60ZT440001K
DigiKey
2
497-6544-1-ND10001Cut Tape
AvnetSTB10NK60ZT401K
7h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STB10NK60ZT4.

Future Electronics

Datasheet24 pagine14 anni fa

element14 APAC

Components Direct

Arrow Electronics

iiiC

Cronologia dell'inventario

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Supply Chain

Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

STMicroelectronicsSTB9NK60ZT4
N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
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Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3
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STMicroelectronicsSTB11NK50ZT4
Power MOSFET, N Channel, 500 V, 4.5 A, 0.48 ohm, TO-263 (D2PAK), Surface Mount
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STMicroelectronicsSTB9NK50ZT4
STB9NK50ZT4 N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN D2PAK
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VishayIRF840ASPBF
Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3
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VishayIRFS11N50APBF
IRFS11N50A Series 500 V 7 A 0.52 Ohms Surface Mount Power Mosfet - D2PAK-3
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Descrizioni

Descrizioni di STMicroelectronics STB10NK60ZT4 fornite dai suoi distributori.

Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
Maritex
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
STMicroelectronics
Transistor MOSFET N-CH 600V 10A 3-Pin (2+Tab) D2PAK T/R
North Star Micro
STB10NK60ZT4 N-CHANNEL MOSFET TRANSISTOR, 10 A, 600 V, 3-PIN D2PAK
RS (Formerly Allied Electronics)
Power MOSFET, N Channel, 600 V, 4.5 A, 0.65 ohm, TO-263 (D2PAK), Surface Mount
Avnet
115W(Tc) 30V 4.5V@ 250¦ÌA 70nC@ 10 V 1N 600V 750m¦¸@ 4.5A,10V 10A 1.37nF@25V D2PAK
Unikeyic (ICkey)
N-Channel 600 V 0.75 Ohm Zener Protected Power MosFet - I2PAK
Future Electronics
N-CHANNEL 600V-0.65 OHM-10A-D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ComSIT Distribution GmbH
MOSFET, N CH, 600V, 10A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
Farnell
Mosfet, N Channel, 600V, 10A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:4.5A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):650Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB10NK60ZT4
Newark

Immagini

RS (Formerly Allied Electronics)
RS
Newark
Future Electronics
iiiC
Lanka Micro

Alias del produttore

STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics