STMicroelectronics 2STF2360
$ 0.215
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Tendenza a 3 mesi: -80.36%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
Diodes Inc.DPLS350Y-13
Trans GP BJT PNP 50V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS PNP 50V 3A SOT89-3
ROHMDTA043ZEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA023JEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Descrizioni
Descrizioni di STMicroelectronics 2STF2360 fornite dai suoi distributori.
Bipolar (BJT) Single Transistor, PNP, 60 V, 3 A, 1.4 W, SOT-89, Surface Mount
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
60V 1.4W 160@1A,2V 3A PNP SOT-89 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 60V 3A 1400mW 4-Pin(3+Tab) SOT-89 T/R
2STF2360 PNP BIPOLAR TRANSISTOR, 3 A, 60 V, 3-PIN SOT-89
STMICROELECTRONICS 2STF2360Bipolar (BJT) Single Transistor, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160
Power Bipolar, PNP, 2V, 150mA, SOT-89, Tape and Reel
STMicroelectronics SCT
500mV@ 150mA,3A PNP 1.4W 6V 100nA 60V 60V 3A SOT-89-3 1.6mm
TRANSISTOR PNP FAST SW SOT-89; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.4W; DC Collector Current: -3A; DC Current Gain hFE: 160hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 320mV; Current Ic Continuous a Max: 2A; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 160; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device
Transistor Pnp Fast Sw Sot-89; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:60V; Frecuencia De Transición Ft:130Mhz; Disipación De Potencia Pd:1.4W; Corriente De Colector Dc:-3A; Ganancia De Corriente Dc Hfe:160 |Stmicroelectronics 2STF2360
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Cronologia dell'inventario
Tendenza a 3 mesi: -80.36%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSOT-89
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage-300 mV
Collector Emitter Voltage (VCEO)60 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-6 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min80
Max Breakdown Voltage60 V
Max Collector Current3 A
Max Frequency130 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation1.4 W
Schedule B8541290080
TerminationSMD/SMT
Transition Frequency130 MHz
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics 2STF2360.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant