onsemi 2SB1124T-TD-E
$ 0.347
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | 2SB1124T-TD-E | 1326 | 23h | |||||||||
| DigiKey | 2SB1124T-TD-EOSCT-ND | 442 | 1 | Cut Tape | ||||||||
| Flip Electronics | 2SB1124T-TD-E | 614.000 | 6d | |||||||||
| RS (Formerly Allied Electronics) | 2SB1124T-TD-E | 0 | 25 | Bulk | 15h | |||||||
| Farnell | 2SB1124T-TD-E | 0 | 1 | Cut Tape | 23h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
Scarica il simbolo onsemi 2SB1124T-TD-E, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 Ultra Librarian | SimboloImpronta | Scarica |
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.347
$ 0.215
Stock
1,399,093
141,818
Authorized Distributors
6
2
Mount
Surface Mount
-
Case/Package
SOT-89
SC
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
3 A
3 A
Transition Frequency
150 MHz
150 MHz
Collector Emitter Saturation Voltage
-700 mV
-
hFE Min
200
200
Power Dissipation
500 mW
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-08-06
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
Diodes Inc.DPLS350Y-13
Trans GP BJT PNP 50V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS PNP 50V 3A SOT89-3
ROHM2SB1561T100Q
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHMDTA023YEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Descrizioni
Descrizioni di onsemi 2SB1124T-TD-E fornite dai suoi distributori.
Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA
ON SEMI 2SB1124T-TD-E PNP BIPOLAR TRANSISTOR, 3 A, 50 V, 3-PIN PCP
Trans GP BJT PNP 50V 3A 500mW 4-Pin(3+Tab) SOT-89 T/R
TRANSISTOR, PNP, -50V, -3A, SOT-89; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -3A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-89
Contact PlatingTin Bismuth
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage-700 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-6 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min200
Max Breakdown Voltage50 V
Max Collector Current3 A
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation500 mW
Schedule B8541210080
Transition Frequency150 MHz
Dimensions
Height1.5 mm
Length4.5 mm
Width2.5 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità