ROHM 2SB1580T100
$ 0.331
NRND
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | 2SB1580T100 | 0 | 1K | Tape & Reel | ||||||||
| Microchip USA | 2SB1580T100 | 1048 | 600 | Tray | 9h | |||||||
| Win Source | WS-2SB1580T100 | 27.463 | 105 | 16h | ||||||||
| Classic Components | 2SB1580T100 | 9180 | 6h | |||||||||
| Worldway Electronics | 2SB1580T100 | 25.114 | 7 | Tape & Reel | 15h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per ROHM 2SB1580T100.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-01
Lifecycle StatusNRND (Last Updated: 4 months ago)
Parti correlate
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Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Diodes Inc.2DB1697-13
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
ROHM2SB1188T100Q
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SB1132T100R
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Descrizioni
Descrizioni di ROHM 2SB1580T100 fornite dai suoi distributori.
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
2SB1580 Series 100 V 2 A Surface Mount PNP Power Transistor - SC-62
TRANSISTOR, PNP, 100V, 2A, SOT-89
1.5V@ 1mA,1A PNP - Darlington 2W 8V 10¦ÌA 100V 100V 2A MPT-3 4.5mm*2.5mm*1.5mm
TRANSISTOR, PNP, 100V, 2A, SOT-89; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 2W; DC Collector Current: 1A; DC Current Gain hFE: 1000hFE; Transist
TRANSISTOR SOT-89; BCE PNP; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:2W; DC Collector Current:1A; DC Current Gain hFE:1000; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:50MHz; Hfe Min:1000; Package / Case:SOT-89; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power Darlington
Alias del produttore
ROHM ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. ROHM può anche essere conosciuto con i seguenti nomi:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-89
Contact PlatingCopper, Tin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage-100 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current-2 A
Current Rating-2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)8 V
Gain Bandwidth Product50 MHz
hFE Min1000
Max Breakdown Voltage100 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation2 W
TerminationSMD/SMT
Transition Frequency50 MHz
Voltage Rating (DC)-100 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per ROHM 2SB1580T100.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant