Diodes Inc. 2DB1714-13
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | 2DB1714-13 | 0 | 5 | Cut Tape | 1d | |||||||
| Win Source | WS-2DB1714-13 | 240 | 120 | 4h | ||||||||
| Worldway Electronics | 2DB1714-13 | 16.528 | 7 | Tape & Reel | 3h | |||||||
| Aztech | 2DB1714-13 | 10.397 | 1d | |||||||||
| SHENGYU ELECTRONICS | 2DB1714-13 | 18.154 | 1 | 2d |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. 2DB1714-13.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descrizioni
Descrizioni di Diodes Inc. 2DB1714-13 fornite dai suoi distributori.
2DB1714 Series 30 V 2 A PNP Surface Mount Transistor - SOT-89-3
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 30V 2A 2000mW 4-Pin(3+Tab) SOT-89 T/R
PNP TRANSISTOR 30V 2A SOT89 RoHSconf
Bipolar Transistors - BJT LO VSAT PNP SMT 2.5K
TRANSISTOR, PNP, SOT89, 0.9W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 900mW; DC Collector Current: 1.5A; DC Current Gain hFE: 270hFE; Transistor
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Specifiche tecniche
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage-370 mV
Collector Emitter Voltage (VCEO)30 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min270
Max Breakdown Voltage30 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Schedule B8541290080
Transition Frequency200 MHz
Dimensions
Height1.4 mm
Length4.5 mm
Width2.5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. 2DB1714-13.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità