Rochester Electronics IRFSL7530PBF
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Rochester Electronics IRFSL7530PBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descrizioni
Descrizioni di Rochester Electronics IRFSL7530PBF fornite dai suoi distributori.
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-262 Tube
Mosfet, N Channel, 60V, 195A, To-262-3
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Alias del produttore
Rochester Electronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Rochester Electronics può anche essere conosciuto con i seguenti nomi:
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
Specifiche tecniche
Physical
Case/PackageTO-262
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time104 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.703 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2 mΩ
Rise Time141 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time172 ns
Turn-On Delay Time52 ns
Dimensions
Height15.1 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Rochester Electronics IRFSL7530PBF.