Infineon IRFSL7534PBF
$ 1.34
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusProduction (Last Updated: 3 months ago)
Parti correlate
Rochester ElectronicsIRFSL7530PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Descrizioni
Descrizioni di Infineon IRFSL7534PBF fornite dai suoi distributori.
TUBE / MOSFET, 60V,195A, 2.4mOhm, 186nC, D2PAK
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
MOSFET, N CHANNEL, 60V, 195A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; MSL:-
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Specifiche tecniche
Physical
Case/PackageTO-262
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time93 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.034 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation294 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity1000
Power Dissipation294 W
Rds On Max2.4 mΩ
Rise Time134 ns
Threshold Voltage3.7 V
Turn-Off Delay Time118 ns
Turn-On Delay Time20 ns
Dimensions
Height15.01 mm