Optek OPB871N55
$ 2.74
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Cronologia dell'inventario
Tendenza a 3 mesi: -20.25%
Modelli CAD
0 modelli disponibili
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0 parti disponibili
Supply Chain
Country of OriginMexico
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 2 months ago)
Descrizioni
Descrizioni di Optek OPB871N55 fornite dai suoi distributori.
890nm Through-Beam 3.18mm Phototransistor wire mounting，base mount 12.32mm*6.35mm*10.8mm
OPTO SWITCH. TRANSMISSIVE; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:30V; Opto Case Style:Slotted; No. of Pins:4; Operating Temperature Range:-40°C to +85°C
OPTO SWITCH. TRANSMISSIVE; Sensor Output: Phototransistor; Sensor Mounting: Panel / Chassis; Gap Width: 3.18mm; Aperture Width: 1.27mm; Forward Current If: 50mA; Reverse Voltage Vr: 2V; Forward Voltage: 1.3V; Product Range: OPB8
Slotted Switch, Phototransistor; Sensor Output Type:Phototransistor; Sensor Mounting:Panel/Chassis; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:Opb870 Series; Aperture Width:1.27Mm Rohs Compliant: Yes |Tt Electronics/optek Technology OPB871N55
Alias del produttore
Optek ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Optek può anche essere conosciuto con i seguenti nomi:
- OPTEK TECHNOLOGY
- TT Electronics/Optek Technology
- OPTEK TECHNOLOGY INC
- OPT
- OPTE
- OPTEK TECH
- OPTEC
- OPTK
- Optek / TT Electronics
- Optek Technology/TT Electronics
- TT Electronics - Optek
- TT Optek
- OPTEK TEC
- OPTEK Technologies
- C- OPTEK
- OPTEK TECHNOLOG
- C-OPTEKTECH
- OPTEK MIL
- OPTEK TECH INC
- Kyocera Optrex
- BEDFORD OPTO TECHNOLOGY LTD
- OPTEK INC
Cronologia dell'inventario
Tendenza a 3 mesi: -20.25%
Modelli CAD
0 modelli disponibili
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountChassis Mount, Through Hole
Number of Pins4
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Forward Current50 mA
Forward Voltage1.3 V
Input Current20 mA
Max Breakdown Voltage30 V
Max Collector Current30 mA
Max Operating Temperature85 °C
Min Operating Temperature-40 °C
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Voltage30 V
Power Dissipation100 mW
Reverse Breakdown Voltage2 V
Reverse Voltage (DC)2 V
Sensing Distance3.175 mm
TouchscreenInfrared (IR)
Wavelength890 nm