onsemi TIP112
$ 1.09
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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|---|---|---|---|
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.09
$ 0.343
$ 0.343
Stock
182,034
261,144
261,144
Authorized Distributors
3
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
TO-220-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
2 A
2 A
2 A
Transition Frequency
2 MHz
-
-
Collector Emitter Saturation Voltage
2.5 V
2.5 V
2.5 V
hFE Min
500
500
500
Power Dissipation
50 W
50 W
50 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1983-08-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-19
LTD Date2010-06-19
Parti correlate
NXP SemiconductorsPHE13007,127
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Descrizioni
Descrizioni di onsemi TIP112 fornite dai suoi distributori.
Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 1A 4V 2A 2W 40MHz
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor TIP112 TO-220AB NPN Darling 2 Amp 100 Volt
TIP112 Series 100 V 2 A Silicon Power Darlington Transistor - TO-220AB
Trans Darlington NPN 100V 2A 2000mW 3-Pin(3+Tab) TO-220AB Bulk
NPN POWER TRANSISTOR 100V/2A DARLINGTON TO-220
2.5V @ IC=2A,IB=8mA NPN - Darlington 2W 5V 2mA 100V 100V 2A TO-220-3 9.4mm
NPN Epitaxial Silicon Darlington Transistor
Darlington Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:50W; DC Current Gain Min (hfe):1000; Package/Case:TO-220; C-E Breakdown Voltage:100V; DC Collector Current:2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.214 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min500
Max Breakdown Voltage100 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation50 W
Transition Frequency2 MHz
Voltage Rating (DC)100 V
Dimensions
Height12.7 mm
Length12.7 mm
Width12.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità